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HN1D01FUTOSHIBAN/a3500avaiDiode Silicon Epitaxial Planar Type Ultra High Speed Switching Application


HN1D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Applicatio ..
HN1D02F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mmUltra High Speed Switching App ..
HN1D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio ..
HN1D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio ..
HN1D03F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mmUltra High Speed Switching App ..
HN1D03FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mmUltra High Speed Switching A ..
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HN1D01FU
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN1D01FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FU

Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25�
�� �C)
*: This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously,
the Maximum Ratings per diode is 75% of the single diode one.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25�
���C)
Weight: 6.8mg
Unit in mm
000707EAA1
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