HN1C05FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
HN1C26FS ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitCollec ..
HN1D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application ..
HN1D01FE ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
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HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1C05FE
Transistor for low frequency small-signal amplification 2 in 1
HN1C05FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C05FE Low Frequency Amplifier Applications
Muting Application
Switching Application Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.)
:@ IC = 10mA/ IB = 0.5mA High Collector Current : IC = 400mA (max)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* :Total rating.
Marking Equivalent Circuit (Top View) Weight: 3.0 mg (typ.)
Unit: mm 2 356 2 3 5 6
Type Name
hFE Rank
