HN1B01F ,Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) ..
HN1B04F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HN1B04FE ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) 6 5 4 Characteristic Symbol Rating Unit Collector power dissi ..
HN1C01F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HN1C01FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN1C01FU ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HX8802-C , CVBS
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1B01F
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
HN1B01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B01F Audio Frequency General Purpose Amplifier Applications
Q1: High voltage and high current
: VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Q2: High voltage and high current
: VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q1 Maximum Ratings (Ta = 25°C) Marking IB −50 mA
Weight: 0.015g
Unit in mm
000707EAA2
