HI301 ,Analog Switch, SPDT, Dual, NOpen, Ron = 35, TTL Compliant Inputs, CMOSApplicationsHI1-0303-2 -55 to 125 14 Ld CERDIP F14.3• Sample and Hold (i.e., Low Leakage Switching) ..
HI3-0200-5 ,Dual/Quad SPST, CMOS Analog SwitchesFeaturesHI-200/HI-201 (dual/quad) are monolithic devices comprising• Analog Voltage Range . . . . . ..
HI3-0201-5 ,Dual/Quad SPST, CMOS Analog SwitchesGeneral Description
The Maxim HI-201 monolithic CMOS quad single-pole-
single-throw (SPST) anal ..
HI3-0201-5 ,Dual/Quad SPST, CMOS Analog SwitchesELECTRICAL CHARACTERISTICS (continued)
(V+ = +15V, V- = -15V, GND = 0V, TA = +25°C, unless other ..
HI3-0201-5 ,Dual/Quad SPST, CMOS Analog SwitchesApplicationsTTL and CMOS compatible for maximum applicationversatility. HI-200/HI-201 are ideal com ..
HI3-0201HS-5 ,High Speed, Quad SPST, CMOS Analog SwitchGeneral Description
Maxim's HI-201HS is a monolithic, CMOS, quad, single-
pole-single-throw (SP ..
HN1C05FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
HN1C26FS ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitCollec ..
HN1D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application ..
HN1D01FE ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Applicatio ..
HI301
