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HGTG7N60A4FAIRCHILN/a3600avai600V, SMPS Series N-Channel IGBT


HGTG7N60A4 ,600V, SMPS Series N-Channel IGBTElectrical Specifications T = 25 C, Unless Otherwise SpecifiedJPARAMETER SYMBOL TEST CONDITIONS MIN ..
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HGTG7N60A4
600V, SMPS Series N-Channel IGBT
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4,
HGTP7N60A4
600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and
HGTP7N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25o C and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
>100kHz Operation at 390V, 7A 200kHz Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . .75ns at TJ = 125oC Low Conduction Loss Temperature Compensating SABER™ Model

Symbol
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel,
e.g., HGTD7N60A4S9A.
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-252AA JEDEC TO-263AB
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
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