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Partno	Mfg	Dc	Qty	Available	Descript
HGTG30N60A4D	FAIRCHIL	N/a	110	avai	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG30N60A4D ,600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeaturesAnti-Parallel Hyperfast Diode• >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gate ..
HGTG30N60B3 ,60A, 600V, UFS Series N-Channel IGBTfeatures of MOSFETs and bipolar • 600V Switching SOA Capabilitytransistors. This device has the hig ..
HGTG30N60B3D ,60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeaturesGo• 60A, 600V, T =25 CC 600V Switching SOA CapabilityEo Typical Fall Time........ 90ns at ..
HGTG40N60A4 ,600V, SMPS Series N-Channel IGBTfeatures of a MOSFET and a • 200kHz Operation At 390V, 20Abipolar transistor. This device has the h ..
HGTG40N60A4 ,600V, SMPS Series N-Channel IGBT
HGTG40N60B3 ,70A, 600V, UFS Series N-Channel IGBTFeaturesoThe HGTG40N60B3 is a MOS gated high voltage switching • 70A, 600V, T = 25 CCdevice combini ..
HMC284MS8G , SPDT NON-REFLECTIVE SWITCH, DC - 3.5 GHz
HMC288MS8 , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC288MS8E , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC291 , 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz
HMC291E , 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz
HMC292LC3B , GaAs MMIC FUNDAMENTAL MIXER, 16 - 30 GHz

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HGTG30N60A4D
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60A4D
600V , SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
C and 150
C. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Symbol
Features >100kHz Operation At 390V, 30A 200kHz Operation At 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T
= 125 Low Conduction Loss
Temperature Compensating
SABER™ Model

Packaging
JEDEC STYLE TO-247
Ordering Information
NOTE: When ordering, use the entire part number.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027