HGT1S7N60A4DS ,600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at high frequencies where low Econduction losses are essential. This device ..
HGT1S7N60B3S ,14A, 600V, UFS Series N-Channel IGBTsfeatures of MOSFETs and bipolar transistors. Theseo = 150 Cdevices have the high input impedance of ..
HGT1S7N60C3D ,14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesfeatures of MOSFETs and bipolar transistors. These(FLANGE)devices have the high input impedance of ..
HGT1S7N60C3DS ,14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesapplications operating at moderate frequencies where low conduction losses are essential, such as: ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs and bipolar transistors. This device • Short Circuit Ratinghas the high input i ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 35A, 1200V, T = 25 CCThe HGTG10N120BND is a Non-Punch ..
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HGT1S7N60A4DS
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast DiodeThe HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25o C and 150o C. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.Formerly Developmental Type TA49333.
Symbol
Features >100kHz Operation At 390V, 7A 200kHz Operation At 390V, 5A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T J = 125oC Low Conduction Loss Temperature Compensating SABER™ Model
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
(FLANGE)E
COLLECTOR
(FLANGE)G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
