HFA16TB120S ,1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesV (typ.)* = 2.3VF• Ultrafast Recovery 4• Ultrasoft Recovery I = 16AF(AV)• Very Low IRRMQ (t ..
HFA200MD40C ,400V 200A HEXFRED Common Cathode Diode in a TO-244AB Isolated packageapplications whereswitching losses are significant portion of the total losses.TO-244AB(ISOLATED)Ab ..
HFA240NJ40C ,400V 240A HEXFRED Common Cathode Diode in a TO-244AB Non-Isolated packageapplications whereswitching losses are significant portion of the total losses.TO-244ABAbsolute Max ..
HFA240NJ40D ,400V 240A HEXFRED Doubler Diode in a TO-244AB Non-Isolated packageapplicationswhere switching losses are significant portion of the total losses.TO-244ABAbsolute Max ..
HFA25TB60 ,600V 25A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.3VF• Ultrafast Recovery 4• Ultrasoft Recovery I = 25AF(AV)• Very Low IRRMQ (t ..
HFA25TB60PBF , HEXFRED Ultrafast Soft Recovery Diode, 25 A
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA16TB120S
1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
International
Tart, Rectifier
Bulletin PD -20605 rev.B 11/00
HF/VI 6TB120S
HEXFREDTM
Ultrafast, Soft Recovery Diode
CATHODE
Features
Ultrafast Recovery 4
Ultrasoft Recovery
Very Low IRRM
Very Low Q" 2
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
CATHODE ANODE
VR = 1200V
vF(typ.)* = 2.3V
IF(AV) = 16A
er (typ.)= 260nC
IRRM(typ.) = 5.8A
tMtyp.) = 30ns
ditrecw/dt (typr = 76AIps
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA16TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-oft" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120S
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max Units
VR Cathode-to-Anode Voltage
1200 V
IF @ Tc = 100°C Continuous Forward Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
Pro A) Tc = 25°C Maximum Power Dissipation
PD @ To = 100°C Maximum Power Dissipation
T: Operating Junction and
TSTG Storage Temperature Range
-55 to +150 W
* 125°C
International
HFA16TB120S
Bulletin PD-20605 rev. B 11/00 IDR liectifi er
Electrical Characteristics ti) To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 V IR = 100pA
2.5 3.0 IF = 16A
VFM Max Forward Voltage 3.2 3.93 V IF = 32A See Fig. 1
2.3 2.7 IF =16A,T: = 125°C
IRM Max Reverse Leakage Current 0.75 20 pA VR = VR Rated See Fig. 2
375 2000 TJ = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 27 40 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 30 IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, 10 90 135 ns To = 25°C
W 164 245 T: = 125°C IF = 16A
IRRW Peak Recovery Current 5.8 10 A To = 25°C
IRRMZ See Fig. 6 8.3 15 T: = 125°C I/e = 200V
Qm Reverse Recovery Charge 260 675 nC TJ = 25°C
an See Fig, 7 680 1838 To = 125''C det = zooms
di(rec)M/dt1 Peak Rate of Fall of Recovery Current 120 Alps TJ = 25°C
di(rec)M/d12 During tr, See Fig. 8 76 T: = 125''C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tesco Lead Temperature 300 °C
Rtmc Thermal Resistance, Junction to Case 0.83 K/W
RthJA © Thermal Resistance, Junction to Ambient 80
Wt Weight 2.0 g
0.07 (oz)
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
