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HFA08TB60S
600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
International
TOR Rectifier
Bulletin PD -20607 rev.B 12/00
HFA08TB60S
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low G,
. Specified at Operating Conditions
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
(N/C) 1 3 (A)
VR = 600V
VF(typ.)* = 1.4V
|F(AV) = 8.0A
er (typ.)= 65nC
IRRM = 5.0A
trr(typ.) = 18ns
di(rec)M/dt (typ.) = 240A/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA08TB60S is a state ofthe art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which result in performance
which is unsurpassed by any rectfer previously available. Nth basic ratings of 600
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast
recovery time, the HEXFRED product line features extremely low values of peak
recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the
tr, portion of recovery. The HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is
ideally suited for applications in power supplies (PFC Boost diode) and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. U n its
VR Cathode-to-Anti/ole; 600 V
IF @ Tc = 100°C Continuous Forward Current 8.0
IFSM Single Pulse FonNard Current 60 A
IFRM Maximum Repetitive Forward Current 24
PD @ Tc = 25°C Maximum PowerDissipation 36
Pro @ Tc = 100°C Maximum PowerDissipation 14 W
T: OperatingJunction and o
TSTG StorageTemperature Range -55 to +150 C
* 125°C
HFA08TB60S
Bulletin PD-20607 rev.B 11/00
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100pA
- 1.4 1.7 IF = 8.0A
VFM Max Forward Voltage - 1.7 2.1 V IF = 16A See Fig. 1
- 1.4 1.7 IF = 8.0A, T: = 125°C
- = See Fi . 2
IRM Max Reverse Leakage Current 0.3 5.0 pA VR VR Rated g
- 100 500 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 10 25 pF VR = 200V See Fig. 3
Ls Series In ductance - 8.0 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To =
25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time - 18 - IF = 1.0A, dir/dt = 200A/ps, VR = 30V
trr1 See Fig. 5, 6 - 37 55 ns T: = 25°C
trr2 - 55 90 TJ = 125°C IF = 8.0A
IRRm Peak Recovery Current - 3.5 5.0 A To = 25°C
IRRMZ - 4.5 80 TJ = 125°C VR = 200V
Qm Reverse Recovery Charge - 65 138 nC T: = 25°C
Ara See Fig. 7 -_- 124 360 T J = 125°C di/dt-- 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 240 - Alps T J = 25°C
di(,ec)M/d12 During it, See Fig.8 - 210 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ. Max. Units
Tlead co Lead Temperature - - 300 "C
RthJc Thermal Resistance, Junction to Case - - 3.5 K/W
RthJA © Thermal Resistance, Junction to Ambient - - 80
Wt Weight - 2.0 - g
- 0.07 - (oz)
co 0.063 in. from Case (1 .6mm) for 10 sec
© TypicalSocketMount
