HFA08TA60C ,600V 8A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TA60CS ,600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TB120 ,1200V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.4VF 4• Ultrafast RecoveryI = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nCr ..
HFA08TB120S ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures V = 1200VRBaseCathode• Ultrafast RecoveryV (typ.)* = 2.4VF2• Ultrasoft RecoveryI = 8.0AF ..
HFA08TB120STRL ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA08TB60 ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.4V• Ultrafast Recovery F4• Ultrasoft RecoveryI = 8.0AF(AV)• Very Low IRRMQ (t ..
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HM628512CLTTI-5 , Wide Temperature Range Version 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTTI-7 , Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628512FP-7 , 524288-word x 8-bit High Speed CMOS Static RAM
HFA08TA60C
600V 8A HEXFRED Common Cathode Diode in a TO-220AB package
International
TOR Rectifier
Bulletin PD -2.601
H FA08TA60C
rev. A 11/00
HEXFREDT" Ultrafast, Soft Recovery Diode
Features 2
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low G,
. Specihed at Operating Conditions
Benefits 1
. Reduced RFI and EMI
VR = 600V
VF = 1.8V
er * = 40nC
di(rec)M/dt * = 280A/ps
* 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA08TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 4 amps per Leg continuous current, the
HFA08TA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08TA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
TO-220AB
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ Tc = 100°C Continuous Forward Current 4.0
IFSM Single Pulse FonNard Current 25 A
IFRM Maximum Repetitive Forward Current 16
Po @ To = 25''C Maximum Power Dissipation 25 W
Po @ Tc = 100°C Maximum Power Dissipation 10
T: Operating Junction and
TSTG Storage Temperature Range - 55 to +150 C
HFA08TA60C
Bulletin PD-2.601 rev.A 11/00
International
IDR Rectifier
Electrical Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.5 1.8 IF = 4.0A
VFM Max Forward Voltage 1.8 2.2 V IF = 8.0A See Fig. 1
1.4 1.7 IF = 4.0A, T: = 125°C
IRM Max Reverse Leakage Current 0.17 3.0 pA I/n = VR Rated See Fig. 2
44 300 TJ = 125°C, VR = 0.8 x VR Rated
Cr Junction Capacitance 4.0 8.0 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH
package body
Dynamic Recovery Characteristics fi) To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
tn Reverse Recovery Time 17 IF = 1.0A, dif/dt = 200A/ps, VR = 30V
tm See Fig. 5, 6 & 16 28 42 ns Tu = 25°C
trr2 38 57 TJ = 125°C IF = 4.0A
|RRM1 Peak Recovery Current 2.9 5.2 A Tu = 25°C
IRRM2 See Fig. 7& 8 3.7 6.7 TJ = 125°C VR = 200V
Qm Reverse Recovery Charge 40 60 n0 TJ = 25''C
er2 See Fig. 9 & 10 70 105 TJ = 125''C dif/dt = 200Nus
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 280 Al s T, = 25°C
di(rec)M/d12 During tr, See Fig. 11 & 12 235 p T: = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tleadd) Lead Temperature 300 ''C
Rthuc Thermal Resistance, Junction to Case 5.0
RthoA © Thermal Resistance, Junction to Ambient 80 KNV
Rthcs© Thermal Resistance, Case to Heat Sink 0.5
. 2.0 g
Wt Weight 0.07 (oz)
. 6.0 12 Kg-cm
T Mounting Torque 5.0 10 Ibf-in
co 0063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
