HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
HFA08SD60SPBF , Ultrafast Soft Recovery Diode, 8 A
HFA08TA60C ,600V 8A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TA60CS ,600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TB120 ,1200V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.4VF 4• Ultrafast RecoveryI = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nCr ..
HFA08TB120S ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures V = 1200VRBaseCathode• Ultrafast RecoveryV (typ.)* = 2.4VF2• Ultrasoft RecoveryI = 8.0AF ..
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HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-7 , 4 M SRAM (512-kword x 8-bit)
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HM628512CLTTI-5 , Wide Temperature Range Version 4 M SRAM (512-kword ´ 8-bit)
HFA08SD60S
600V 8A HEXFRED Discrete Diode in a D-Pak package
International
IEZR Rectifier
Bulletin PD-20618 rev.B 07/02
HFA08SD60S
Ultrafast, Soft Recovery Diode
Features
. Ultrafast Recovery Time
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qrr
. Guaranteed Avalanche
. Specified at Operating Temperature
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and
Switching Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description! Applications
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applicationrThese devices areideally suited forfreewheeling,
flyback, powerconverters, motordrives, and other applications
where high speed and reduced switching losses are design
requirements.
t rr = 18ns
|F(AV) = 8Amp
VR = 600V
Package Outline
D - PAK
Absolute Maximum Ratings
Parameters Max Units
VRRM Cathode-to-Ano" Voltage 600 V
IHAV) Continuous Forward Current 8 A
Tc = 100''C
IFSM Single Pulse Forward Current 60
IFRM Peak Repetitive Forward Current 24
PD Maximum Power Dissipation 14 W
Tc = 100''C
Ts TSTG Operating Junction and Storage Temperatures - 55 to 150 'C
HFA08SD60S
Bulletin PD-20618 rev.B 07/02
International
IEER liectifier
Electrical Characteristics (ti) TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 600 - - V IR = 100PA
Blocking Voltage
VF Fon/vard Voltage - 1.4 1.7 IF = 8A
See Fig.1 - 1.7 2.1 IF = 16A
- 1.4 1.7 IF = 8A, TJ = 125''C
IR Max. Reverse Leakage Current - 0.3 5.0 pA VR = VR Rated
- 100 500 pA TJ = 125°C, VR = 0.8 x VR Rated
Cr Junction Capacitance - 10 25 pF I/e = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - 18 - ns IF = 1.0A, diF/dt = 200AlpA, VR = 30V
- 37 55 T: = 25''C IF: 8A
- 55 90 T: = 125°C VR = 200V
IRRM Peak Recovery Current - 3.5 5.0 A T J = 25''C diF/dt = 200Alps
- 4.5 8.0 T: = 125°C
Gr Reverse Recovery Charge - 65 138 nC TJ = 25''C
- 124 360 T, = 125°C
di(rec)M/dt Rate of Fall of recovery Current - 240 - Alps T., = 25°C
- 210 - T: = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
TJ Max. Junction Temperature Range - - - 55 to 150 'C
TStg Max. Storage Temperature Range - - _ 55 to 150
Tlead Lead Temperature - - 300
Rthoc Thermal Resistance, Junction to Case - - 3.5 "C/ W
RNA OD Thermal Resistance, Junction to Ambient - - 80
Wt Weight - 2.0 - g
- 0.07 - (oz)
C) Typical Socket Mount
2
