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HFA06TB120SIRN/a1164avai1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package


HFA06TB120S ,1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures• Ultrafast Recovery(K)V = 1200VR• Ultrasoft RecoveryBASE• Very Low I V (typ.)* = 2.4VRRM ..
HFA08PB120 ,1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeaturesV (typ.)* = 2.4VF • Ultrafast Recovery 4I = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nC• ..
HFA08PB60 ,600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures V = 600VRCATHODE• Ultrafast RecoveryV (typ.)* = 1.4VF4• Ultrasoft RecoveryI = 8.0AF(AV)• V ..
HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
HFA08SD60SPBF , Ultrafast Soft Recovery Diode, 8 A
HFA08TA60C ,600V 8A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
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HFA06TB120S
1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
Bulletin PD-20602 rev.C 12/00
International
TOR Rectifier HFA06TB120S.. Series
HEXFRED'" Ultrafast, Soft Recovery Diode
Features
. UltrafastRecovery
. Ultrasoft Recovery (K) VR = 1200V
. Very Low IRRM BASE VF(typ.)* = 2.4V
. Very Low Q,, + 2 IHAV) = 6.0A
. Specified at Operating Conditions G, (NP): 1 16 nC
Benefits IRRMGYP) = 4.4A
. Reduced RFI and EMI (N/C) 1 3 (A) trr(typ.) = 26ns
. Reduced Power Loss in Diode and Switching - di(rec)M/dt (typ.)* = 100Alps
Transistor
. HigherFrequencyOperation
. Reduced Snubbing
. Reduced Parts Count
Description
International RectfIer's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offerdesigners a rectiferwith lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in powersupplies
and power conversion systems (such as inverters), motordrives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-toAnode Voltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 80 A
IFRM Maximum Repetitive Forward Current 24
Pro @ Tc = 25°C Maximum Power Dissipation 62.5 W
PD @ Tc = 100°C Maximum Power Dissipation 25
T, Operating Junction and o
TSTG Storage Temperature Range -55 to +150 C
* 125''C
HFA06TB1208..Series Internatiqrjol
Bulletin PD-20602 rev.C 12100 IEZR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown 1200 --.- --.- V IR: 100PA
Voltage
VFM Max. Fon/vard Voltage - 2.7 3.0 IF = 6.0A
- 3.5 3.9 V IF = 12A
- 2.4 2.8 IF = 6.0A, To = 125°C
IRM Max. Reverse Leakage Current - 0.26 5.0 VR = VR Rated
- 110 500 “A T: = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 9.0 14 pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse RecoveryTime - 26 - IF = 1.0A, difldt = 200Alps, VR = 30V
’tm - 53 80 ns To = 25''C
tn - 87 130 TJ = 125°C IF = 6.0A
IRRW Peak Recovery Current - 4.4 8.0 A TJ = 25°C
IRRM2 - 5.0 9.0 To = 125''C VR = 200V
Qm Reverse RecoveryCharge - 116 320 To = 25''C
an - 233 585 nC To = 125°C dir/dt = 200A/ps
di(rec)M/dt1 Peak Rate of Recovery - 180 - TJ = 25°C
di(rec)M/dt2 Current During k, - 100 -.-.- Alps T J = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tlead 0) Lead Temperature - - 300 'C
Rm Thermal Resistance, Junction to Case - - 2.0
RthA 0) Thermal Resistance, Junction to Ambient --.-.- --.-.- 80 K/W
Rthcsg) Thermal Resistance, Case to Heat Sink --- 0.5 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
co 0.063 in. from Case (1.6mm) for 10 sec
© TypicalSocketMount
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