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GT60M301
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
TOSHIBA GT60M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT60M301
HIGH POWER SWITCHING APPLICATIONS Unit in mm
0 The 3rd Generation 20.5MAX. 33102
0 FRD Included Between Emitter and Collector d g
o Enhancement-Mode o 'ii
o High Speed IGBT : tf=0.25/zs(Typ.) rs' 1f
2. g 3
FRD : trr=0.7,as(Typ.) g
0 Low Saturation Voltage : VCE (sat)=3.4V(Max.) 10335 N
54510.15 54510.15
MAXIMUM RATINGS (Ta=25°C) l) 1 2 33 g Cl
'Dc=tcerajia Rss J-
CARACTERISTICS SYMBOL RATINGS UNIT ' ' f
Collector-Emi; Voltage VCES 900 V l. GATE
2. COLLECTOR(HEAT SINK)
Gate-Emitter Voltage VGES :25 V 3. EMITTER
DC I 60 -
Collector Current C A JEDEC
lms ICP 120 EIAJ -
Emitter-Collector DC IECF 15 A TOSHIBA 2-21cm
Foward Current lms IECFP 120 Weight : 9.75g
Junction Temperature (Tc=25°C) PC 200 W
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 "C
Screw Torque - 0.8 Nan
EQUIVALENT CIRCUIT
Collector
Gate ty-I
Emitter
1 2001-05-24
TOSHIBA GT60M301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 25V, VCE = 0 - - i500 nA
Collector Cut-off Current ICES VCE=900V, VGE=0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) IC = 60mA, VCE = 5V 3.0 - 6.0 V
Co11ector-Emitter Saturation
Voltage VCE (sat) (1) IC - 10A, VGE - 15V - 1.8 2.4
Collector-Emi; Saturation
Voltage VCE (sat) (2) 10 =60A, VGE - 15V - 2.3 3.4 V
. . VCE = 30V, VGE = 0
Input Capacitance Cies f-- 1MHz - 2700 - pF
Rise Time tr - 0.25 0.60
. . . Turn-on Time ton 330% g - 0.35 0.80
Switching Time . 15V H ps
Fall Time tf 0 - 0.25 0.40
Turn-off Time toff - 15V 600V - 0.50 1.00
Emitter-Collector Forward Voltage VECF IEC=15A, VGE=0 - 1.5 2.0 V
Reverse Recovery Time trr IF-- 15A, di/ dt= -20A - 0.7 2.5 gs
Thermal Resistance Rth (i-c) IGBT - - 0.625 "C/W
Thermal Resistance Rth Que) Diode - - 4.0 "C/W
2 2001 -05-24
TOSHIBA
IC - VCE
COMMON EMITTER 20 10 8
c = 25°C
COLLECTOR CURRENT 10 (A)
VGE=5V
0 1 2 3 4 5
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Te = 25''C
COLLECTOR—EMI'I'I‘ER VOLTAGE VCE (V)
0 4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT 10 (A)
Te = 125°C
0 2 4 6 8 10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR~EMITTER SATURATION
VOLTAGE VCE(sat) (V)
GT60M301
VCE - VGE
COMMON EMITTER
Te = - 40°C
0 4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Tc = 1 25°C
IC=10A
o 4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
VCE (sat) - Te
COMMON EMITTER
VGE = 15V
- 4O 0 40 80 120 160
CASE TEMPERATURE Te (°C)
TOSHIBA
VCE, VGE - QG
(X 10V)
VCE = 150V
COMMON EMITTER
00 RL = 2.594
50 Tc = 25''C
0 40 80 120 160
GATE CHARGE at; (nC)
SWITCHING TIME - IC
COLLECTOR-EMITTER VOLTAGE VCE
GATE-EMITTER VOLTAGE
COMMON EMITTER
vcc=eoov, Rg=510
VGE = i 15v, Te = 25''C
SWITCHING TIME
10 20 30 40 50 60
COLLECTOR CURRENT 10 (A)
PARALLEL RESONANCE I
SWITCHING TIME - C
(i''s COMMON EMITTER,
a Vcc=150V, C=0.4PF
r'-! _L,-rHsuto--10n
U VGG= 0V
ti Tc=90°c__
E 0.6 ...-.
fi': v
pd 0.4
" . tf
E; 0 "f-
tk o 10 20 30 40 50 60 70
COLLECTOR PEAK CURRENT ICP (A)
CAPACITANCE C (pF) SWITCHING TIME (/15)
PARALLEL RESONANCE SWITCHING TIME (/18)
GT60M301
SWITCHING TIME - RG
COMMON
EMITTER
VCC = 600V
10 = 60A
VGE = i 15V
Te = 25''C
10 30 50 100 300 500
GATE RESISTANCE RG (f2)
COMMON
EMITTER
VGE = 0V Cres
f = IMHz
Tc = 25°C
3 5 10 30 50 100 300 500
COLLECTOR-EMITTER VOLTAGE VCE (V)
PARALLEL RESONANCE R
SWITCHING TIME - G
Tc = 90°C
COMMON EMITTER
VCC-- 150V, Icp=60A
c=o.4 H, L=50 H
f/J', "
VGG= av
10 20 30 40 50 60
GATE RESISTANCE RG (0)
TOSHIBA GT60M301
SAFE OPERATING AREA REVERSE BIAS SOA
300 300
Trs 125°C
= +20v
MAX. (PULSED)
100 MAX.
CONTINUOU
100 RG=10S2
30 OPERATION) 30
0 >I
PULSE Te=25''C
5 CURVES MUST BE
3 DERATED
LINEARLY WITH
INCREASE IN
1 TEMPERATURE.
COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
1 3 10 30 100 300 1000 10 30 100 300 1000 3000
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
Rth(t) - tw IECF - VECF
COMMON COLLECTOR
DIODE STAGE
IGBT STAGE 60
(”CIW)
IECF (A)
Rth(t)
Tc= 125°C
TRANSIENT THERMAL IMPEDANCE
EMITTER-COLLECTOR FORWARD CURRENT
0 0.4 0.8 1.2 1.6 2.0 2.4
EMITTER-COLLECTOR FORWARD VOLTAGE
PULSE WIDTH tw (s) VECF (V)
Irr, trr - IECF Irr, trr - di/ dt
2 o - 20 2.0 -
a" g" COMMON COLLECTOR 3 E COMMON COLLECTOR
tl. _ M tk _ M
V M dildt=20A/ps V M IECF=60A
: 1.6 - g 16 T =25'C e 1.6 - S T =25'C
<2 C) C- - O C-
m - ts M _ the
E E5 E E
F "tas 12 F "ta
>* v >4 V
',li _ 3 : 'ii _ 3 a
8 0.8 - aa H 8 8 0.8 - a H
a $ M ffl
M _ m M _ a
Q 0.4 - ttt 4 E? 0.4 - M
m " Ix: a
it 1 g it 1 g
n: l ttd l
0 _ o o _
0 20 40 60 80 100 0 40 80 120 160 240
EMITTER-COLLECTOR FORWARD CURRENT .
IECF (A) di/ dt (A/ ps)
5 2001-05-24
TOSHIBA GT60M301
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2001-05-24
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