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GT60J322TOSHIBAN/a16avaiInsulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications


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GT60J322
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322

The 4th Generation
Soft Switching Applications Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta �
�� � 25°C)
Equivalent Circuit

Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
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