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GT50J328TOSHIBAN/a450avaiDiscrete IGBT


GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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GT50J328
Discrete IGBT
GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328

Current Resonance Inverter Switching Application
Fourth Generation IGBT Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Equivalent Circuit Marking

Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of
the use of certain hazardous substances in electrical and electronic equipment.
Unit: mm
Weight: 4.6 g (typ.)
Gate
Emitter
Collector
Lot No.
Note 1
Part No. (or abbreviation code)50J328
TOSHIBA
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