GT40T301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching ApplicationsApplications Unit: mm FRD included between emitter and collector Enhancement-mode High ..
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GT40T301
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301 Parallel Resonance Inverter Switching Applications FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Maximum Ratings (Ta ��� � 25°C)
Equivalent Circuit Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
