GT40M101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS High Input Impedance High Speed : t = 0.4µs (Max.) fLow Saturation Voltage : ..
GT40Q321 ,Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching ApplicationGT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Res ..
GT40Q322 ,Voltage Resonance Inverter Switching ApplicationThermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.625 °C/W th ( ..
GT40Q323 , Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
GT40T101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mmH ..
GT40T301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching ApplicationsApplications Unit: mm FRD included between emitter and collector Enhancement-mode High ..
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC1-1R0-R , High Current Inductor
HC123 ,Dual Retriggerable Monostable MultivibratorM54HC123/123AM74HC123/123ADUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR. HIGH SPEEDtPD = 25 ns (TYP) ..
GT40M101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT40M101 HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf = 0.4µs (Max.) Low Saturation Voltage : VCE(sat) = 3.4V (Max.) Enhancement−Mode
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Rth(j−c)
Weight: 5.8g
Unit: mm
