GT40G121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching ApplicationsApplications Enhancement-mode High speed: t = 0.30 µs (typ.) (I = 60 A) f C Low saturat ..
GT40G121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching ApplicationsGT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Gene ..
GT40M101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS High Input Impedance High Speed : t = 0.4µs (Max.) fLow Saturation Voltage : ..
GT40Q321 ,Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching ApplicationGT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Res ..
GT40Q322 ,Voltage Resonance Inverter Switching ApplicationThermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.625 °C/W th ( ..
GT40Q323 , Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC1-1R0-R , High Current Inductor
HC123 ,Dual Retriggerable Monostable MultivibratorM54HC123/123AM74HC123/123ADUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR. HIGH SPEEDtPD = 25 ns (TYP) ..
GT40G121
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121 The 4th Generation
Current Resonance Inverter Switching Applications Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Rth(j-c)
Unit: mm
Weight: 2 g (typ.)
