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GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324 High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C) Tstg
Thermal Characteristics
Equivalent Circuit Unit: mm
Weight: 4.6 g (typ.)
Gate
Emitter
