GT25Q102 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching ApplicationsApplications Unit: mm The 3rd Generation Enhancement-Mode High Speed: t = 0.32 µs (max) ..
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GT28F160B3T120 , SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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HBR1105W , Single Color 3216 Dome Lenz Type
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HC005A0F1-SZ , 18-36Vdc & 36-75Vdc Input; 1.0V-5Vdc Output; 4A - 6A Output Current
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
GT25Q102
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
GT25Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q102 High Power Switching Applications The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta ��� � 25°C)
Unit: mm
Weight: 9.75 g (typ.)
