IC Phoenix
 
Home ›  GG7 > GT25G102,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT25G102 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
GT25G102TOSN/a50avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS


GT25G102 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) ..
GT25J101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.35,us (Max.)0 Low Satu ..
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS20.5MAX. 3.3 $0.2 I0 High Input Impedance26.0 i 0.50 High Speed : tf= 0.5 ps (Max.)0 Lo ..
GT25Q102 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching ApplicationsApplications Unit: mm  The 3rd Generation  Enhancement-Mode  High Speed: t = 0.32 µs (max) ..
GT25Q301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications  The 3rd generation  Enhancement-mode  High speed: t = 0.32 µs (max) f Low ..
HBN2444S6R , Low Vcesat NPN Epitaxial Planar Transistor (Dual Transistors)
HBR1105W , Single Color 3216 Dome Lenz Type
HBS100ZG-A ,One - HBS SERIES - 100 WATT
HBS100ZG-A ,One - HBS SERIES - 100 WATT
HC005A0F1-SZ , 18-36Vdc & 36-75Vdc Input; 1.0V-5Vdc Output; 4A - 6A Output Current
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..


GT25G102
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G102

STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Cies VCE = 10V, VGE = 0, f = 1MHz
Weight: 1.5g
Unit: mm
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED