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GT15Q101TOS N/a1100avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
GT15Q101TOSHIBAN/a55avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS


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GT15Q101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA GT15Q101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GTIl SQ’I] 1]
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS 15.9MAX ¢3.2:0.2
2.0 I ‘
.LOJ .
20.0 10.3
20.5 10.5
0 High Input Impedance
0 High Speed : tf=0.5,us (Max.)
0 Low Saturation Voltage 2 VCE (sat)=4-0V (Max.)
0 Enhancement-Mode
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2 ‘T Q
- _ - _ 4 m
Collector-Emitter Voltage VCES 1200 V 2 3 N"
Gate-Emitter Voltage VGES i 20 V
l. GATE
Collector Current DC IC 15 A 2. COLLECTOR(HEAT SINK)
lms ICP 30 3. EMITTER
Collector Power Dissipation JEDEC -
(Tc: 25°C) PC 150 W EIAJ -
J unction Temperature Tj 150 "C TOSHIB A 2-16C1C
Storage Temperature Range Tstg -55--150 °C Weight : 4.6g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = Lf- 20V, VCE = 0 - - i' 500 nA
Collector CU-off Current ICES VCE = 1200V, VGE=0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) 10 = 15mA, VCE =5V 3.0 - 6.0
Collector-Emi; - -
Saturation Voltage VCE (sat) IC - 15A, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 1800 - pF
Rise Time tr VQDUT - 0.3 0.6
Switching Turn-on Time ton VOIN w I g - 0.4 0.8
. . 15V 1000 " #8
Time Fall Time tf 0V - 0.25 0.5
Turn-off Time toff VCC = 600V - 0.8 1.5
1 2001-05-24
TOSHIBA
GT15Q101
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COMMON
EMITTER
To = 25°C
C0LLECT0R-EMITTER VOLTAGE VCE (V)
COMMON EMITTER
Tc = 25''C
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER
VCE =5V
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR—EMIT’I‘ER VOLTAGE VCE
VCE - VGE
COMMON EMITTER
Te = - 40°C
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Tc= 125°C
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON EMITTER
RL = ton
Tc = 25''C
80 120
GATE CHARGE QG (110)
GATE-EMITTER VOLTAGE
TOSHIBA
GT15Q101
SWITCHING TIME (/15)
CAPACITANCE C (pF)
10 (A)
COLLECTOR CURRENT
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V
ng=i15V
RC--100Q
1 Tc=25°C
0 2 4 6 8 10 12 14
COLLECTOR CURRENT IC (A)
C - VCE
COMMON EMITTER
50 VGE=0
30 f=1MHz
Tc=25°C
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
IT. SINGLE NONREPETITIVE PULSE Tc=25°C
CURVES MUST BE DELATED LINEARLY
WITH INCREASE IN TEMPERATURE.
100 I))',',)'} I I lllllll
- I 11II1III I I Illllll
-IC MAx.(PULSED))'.4 'd "Q
30 11mm} _ ff',',', -
l -100 sik.
10 IC MAX. N., S, N N "
(CONTINUOUS) _ -
h OPERATION N ,
3 Ims)k. \
1 3 10 30 100 300 1000 3000
c0LLEcT0RaMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL RESISTANCE
SWITCHING TIME (/15)
Rth (1) (°C / W)
10 (A)
COLLECTOR CURRENT
SWITCHING TIME - RG
COMMON EMITTER
Vcc=600V
IC-- 15A
VGG= i 15V
Tc=25°C
10 30 100 300 1000 3000
GATE RESISTANCE RG (Q)
Rth (t) - tw
10-2 IO-l 1 10
PULSE WIDTH tw (s)
REVERSE BIAS SOA
Tjs125T
VGE= i15V
RG=1000
400 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
1200 1600
TOSHIBA GT15Q101
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
:
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