GT15J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications The 4th generation FS (fast switching) Enhancement-mode High speed: t = ..
GT15J321. ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsGT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Sw ..
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GT15Q102 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSApplications Unit: mm The 3rd Generation Enhancement-Mode High Speed: t = 0.32 µs (max) ..
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HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
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HBFP-0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorHigh Performance IsolatedCollector Silicon BipolarTransistorTechnical DataHBFP-0420
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GT15J321-GT15J321.
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321 High Power Switching Applications
Fast Switching Applications The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.
Maximum Ratings (Ta ��� � 25°C) Tstg
Equivalent Circuit Unit: mm
Weight: 1.7 g
Gate
Emitter
