GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mmHIGH ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 15A) f ..
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GT15J301
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15J301 HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between Emitter and Collector.
MAXIMUM RATINGS (Ta = 25°C) Tstg
EQUIVALENT CIRCUIT Weight: 1.7g
Unit: mm
