| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GSWA-4-30DR |
ALPHA |
N/a |
5000 |
 |
Circuits - SWITCHES GAAS SP4T WITH TTL Drivers DC to 3 GHz |
| GSWA-4-30DR |
Mini |
N/a |
24 |
|
Circuits - SWITCHES GAAS SP4T WITH TTL Drivers DC to 3 GHz |
| GSWA-4-30DR |
MCL |
N/a |
55000 |
|
Circuits - SWITCHES GAAS SP4T WITH TTL Drivers DC to 3 GHz |
GSX-433/111DF 12.000MHZ Golledge
GSX923017CI MOT
GT=R05 RICHTEK
GT0100 NSC
GT020Z-2 POWERONE
GT0220EM8X FAI
GT0230 GAMMA
GT0230 NA
GT023453 NS
GT03-111-034-C , Gate Drive Transformer
GT0320EM8 FAI
GT0330 FAI
GT0530 SINYORK
GT058-24P-P1000 LSCABLE
GT0705X
GT1033 GMT
GT1040 JAT
GT108-300-A1 NVIDIA
GT108-ES-A1 INTEL
GT108M GREENCH
GT10G101 TOSHIBA
GSWA-4-30DR ,Circuits - SWITCHES GAAS SP4T WITH TTL Drivers DC to 3 GHz
GT10G131 ,IGBT for strobe flashThermal Characteristics Characteristics Symbol Rating Unit Thermal resistance , junction to R (1 ..
GT10J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : t = 0.30µs (Max.) fLow S ..
GT10J311 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT10J312 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
HBD040ZGE-A ,One - HBD SERIES - DUAL OUTPUT, 60 WATT
HBD060YGE-A ,One - HBD SERIES - DUAL OUTPUT, 60 WATT
HBD060ZGE-A ,One - HBD SERIES - DUAL OUTPUT, 60 WATT
