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15.625ms

GS8160E32BGT-150

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Partnumber Manufacturer Quantity Availability
GS8160E32BGT-150,GS8160E32BGT150 136 In Stock

Description and Introduction

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs The part **GS8160E32BGT-150** is a **16Mb (2M x 8-bit) 3.3V CMOS Synchronous SRAM** manufactured by **GigaDevice**.  

### Key Specifications:  
- **Density:** 16Mb (2M words × 8 bits)  
- **Voltage Supply:** 3.3V ±10%  
- **Speed Grade:** 150 MHz (6.6 ns access time)  
- **Organization:** 2,097,152 words × 8 bits  
- **Interface:** Synchronous (ZBT™ feature supported)  
- **Package:** 119-ball BGA (10mm × 14mm)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Features:**  
  - Pipelined and flow-through operation  
  - Byte write control  
  - Single-cycle deselect  
  - Auto power-down mode  

For exact details, refer to the official **GigaDevice datasheet**.

Partnumber Manufacturer Quantity Availability
GS8160E32BGT-150,GS8160E32BGT150 GSI-PBFREE 136 In Stock

Description and Introduction

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs The part **GS8160E32BGT-150** is manufactured by **GSI-PBFREE**.  

Key specifications:  
- **Type**: Synchronous SRAM  
- **Density**: 16Mbit (2M x 8)  
- **Speed**: 150MHz  
- **Voltage**: 3.3V  
- **Package**: 119-ball BGA (Ball Grid Array)  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Pb-Free**: Yes (RoHS compliant)  

Additional features:  
- Pipelined and flow-through operation  
- Single 3.3V power supply  
- ZZ (sleep) mode for power savings  

For exact details, refer to the official datasheet.

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