Partno |
Mfg |
Dc |
Qty |
Available | Descript |
GE28F640W18TD60 |
INTEL |
N/a |
326 |
|
Intel® Wireless Flash Memory |
GE28F640W18TD60 , Intel® Wireless Flash Memory
GE28F640W18TD80 , Intel® Wireless Flash Memory
GE28F800B3BA90 , 3 Volt Advanced Boot Block Flash Memory
GE40N03 , N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE7805 , 3-TERMINAL POSITIVE VOLTAGE REGULATORS
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
GT50J325 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..