| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GE28F640W18BD80 |
INTEL |
N/a |
19476 |
 |
Intel® Wireless Flash Memory |
GE28F640W18TD INTEL
GE28F640W18BD80 , Intel® Wireless Flash Memory
GE28F640W18TD60 , Intel® Wireless Flash Memory
GE28F640W18TD80 , Intel® Wireless Flash Memory
GE28F800B3BA90 , 3 Volt Advanced Boot Block Flash Memory
GE40N03 , N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
GT50J325 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequen ..
