| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GE28F320W30B85 |
INTEL |
N/a |
50000 |
 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
GE28F320W30BD70 INTEL
GE28F640C3TC80 INTER, Advanced Boot Block Flash Memory (C3)
GE28F640C3TC80 INTEL, Advanced Boot Block Flash Memory (C3)
GE28F320W30B85 , 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
GE28F640W18BD60 , Intel® Wireless Flash Memory
GE28F640W18BD80 , Intel® Wireless Flash Memory
GE28F640W18TD60 , Intel® Wireless Flash Memory
GE28F640W18TD80 , Intel® Wireless Flash Memory
GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
