| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GE28F128W18BD60 |
INTEL |
N/a |
480 |
 |
Intel® Wireless Flash Memory |
GE28F128W30B90 INTEL
GE28F128W30BD INTEL
GE28F128W30BD70 INTEL
GE28F160B3BD70 INTEL
GE28F128W18BD60 , Intel® Wireless Flash Memory
GE28F160C3BC70 , Advanced Boot Block Flash Memory (C3)
GE28F160C3TC70 , Advanced Boot Block Flash Memory (C3)
GE28F160C3TC80 , Advanced Boot Block Flash Memory (C3)
GE28F160C3TD70 , Advanced Boot Block Flash Memory (C3)
GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
