| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GDS1110AB |
INTEL |
N/a |
22 |
 |
Intel-R StrongARM SA-1110 Microprocessor |
GDS1110AD StrongARM
GDS1110AD INTEL
GDS1110BA
GDS1110AB , Intel-R StrongARM SA-1110 Microprocessor
GDS1110BB , Intel-R StrongARM SA-1110 Microprocessor
GE28F128L18B85 , StrataFlash Wireless Memory
GE28F128L30B85 , 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30)
GE28F128W18BD60 , Intel® Wireless Flash Memory
GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
