| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GDM1002-PT25T |
GCT |
N/a |
6000 |
 |
|
| GDM1002-PT25T |
GCT |
N/a |
2000 |
|
|
GDS1110AB , Intel-R StrongARM SA-1110 Microprocessor
GDS1110BB , Intel-R StrongARM SA-1110 Microprocessor
GE28F128L18B85 , StrataFlash Wireless Memory
GE28F128L30B85 , 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30)
GE28F128W18BD60 , Intel® Wireless Flash Memory
GT40G121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching ApplicationsGT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Gene ..
GT40M101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS High Input Impedance High Speed : t = 0.4µs (Max.) fLow Saturation Voltage : ..
GT40Q321 ,Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching ApplicationGT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Res ..
