| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GDC21S802A |
LG Semicon |
N/a |
211 |
 |
|
GDH04S04 , DIP SWITCH GDH SERIES
GDS1110AB , Intel-R StrongARM SA-1110 Microprocessor
GDS1110BB , Intel-R StrongARM SA-1110 Microprocessor
GE28F128L18B85 , StrataFlash Wireless Memory
GE28F128L30B85 , 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30)
GT30J311 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSAPPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : t = 0 ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mmTHE 4 ..
