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GA200HS60SIRN/a15avai600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package


GA200HS60S ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600VCES • Generation 4 IGBT TechnologyV = 1.19V @CE(on) typ. • Standard speed: optimize ..
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GA200HS60S
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package
Bulletin I27121 rev.B 07/02
International
IOR Rectifier GA200HS60S
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features V = 600V
. G ti 4IGBTT h I -
. 15rtl.;'lflp1tlt'oliir17z"l7ifrer.d. switching VCE(on)typ. - 1.19V @
. ()'t'yraLehtefilt1ense'stsoal000 Hz _ veg = 15V, lc = 200A
. Industry standard package T: = 25°C
Benefits
. Increased operating efficiency
. Direct mounting to heatsink
. Performance optimized as output inverterstage
for TIG welding machines
INT-A-PAK
Absolute Maximum Ratings
Parameters Max Units
VCES Collector-to-Emitter Voltage 600 V
Ic Continuos Collector Current @ TC = 25''C 470 A
@ TC = 110°C 200
ICM Pulsed Collector Current 800
ILM Peak Switching Current 800
VGE Gate-to-Emitter Voltage , 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Po Maximum Power Dissipation @ To = 25°C 830 W
© TC = 85''C 430
1
GA200HS60S International
Bulletin I27121 rev.B 07/02 TOR Ilectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VCES Collettor-ttFEmiiterBreakdaNn Voltage 600 V I/se = 0V, Ic = 1mA
VCE(on) Collector-to-EmitterVoltage 1.19 1.25 I/se = 15V, lc = 200A
1.17 I/se =15V, Ic = 200A, To = 125°C
VGE(th) Gate Threshold Voltage 3 6 lo = 0.5mA
ICES Collector-to-Emiter Leakage 1 mA VGE = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = MOV, To = 125°C
IGES Gate-to-Emitter Leakage Current * 250 nA VGE = i 20V
Switching Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Qg Total Gate Charge 1600 1700 nC lc = 200A
Qge Gate-Emitter Charge 260 340 Vcc = 400V
Qgc Gate-ColiectorCharge 580 670 VGE = 15V
Eon Tum-On Switching Loss 27 mJ Ic = 200A, Vcc = 480V, VGE = 15V
Eoff Turn-Off Svvitchirtg Loss 47 R9 = 109
Ets Total Svvitching Loss 74 freewheeling DIODE: 30ETH06
Eon Turn-On Switching Loss 29 31 mJ Ic = 200A, VCC = 480V, VGE = 15V
Eoff Turn-Off Switching Loss 77 90 R9 = lon
Ets Total Switching Loss 106 121 free-vvheelirtg DIODE: 30ETH06, T J = 125°C
Cies Input Capacitance 32500 pF VGE = 0V
Coes Output Capacitance 2080 Vcc = 30V
Cres Reverse Transfer Capacitance 380 f = 1.0 MHz
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
T., Operating Junction Temperature Range - 40 150 "C
TSTG Storage Temperature Range - 40 125
Rch Junction-to-Case 0.15 "C/ W
RthCS Case-to-Sink 0.1
T Mounting torque Case to heatsink 4 Nm
Case to terminal I, 2, 3 3
Weight 185 g

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