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GA100TS60U
600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
PD -50055C
International
TOR Rectifier GA100TS60U
"HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT
Features
q Generation 4 IGBT technology SI 1 S2 VCES = 600V
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 5 2 VCE(on) typ. = 1.6V
kHz in resonant mode T T
. Very low conduction and switching losses 4 5 6 7
q HEXFRED'" antiparallel diodes with ultra- soft @VGE = 15V, IC = 100A
recovery
. Industry standard package
q UL recognition pending
Benefits
q Increased operating efficiency
. Direct mounting to heatsink
. Performance optimized for power conversion: UPS,
SMPS, Welding
. Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ To = 25°C Continuous Collector Current 100
ICM Pulsed Collector Current. 200 A
ILM Peak Switching Current, 200
IFM Peak Diode Forward Current 200
VGE Gate-to-Emitter Voltage _+20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ To = 25°C Maximum Power Dissipation 320 W
PD @ To = 85°C Maximum Power Dissipation 170
To Operating Junction Temperature Range -40 to +150 ''C
Tsms Storage Temperature Range MO to +125
Thermal / Mechanical Characteristics
Parameter Typ. Max. Units
ReJc Thermal Resistance, Junction-to-Case - IGBT - 0.38
Roos Thermal Resistance, Junction-to-Case - Diode - 0.70 °C/W
Recs Thermal Resistance, Case-to-Sink - Module 0.1 -
Mounting Torque, Case-to-Heatsink © - 6.0 N.m
Mounting Torque, Case-to-Terminal 1, 2 & 3 © - 5.0
Weight of Module 200 - g
1
09/02/02
International
GA100TS60U TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emitter Breakdown Voltage 600 - - Vas = 0V, lc = 1mA
V0.30,” Collector-to-Emitter Voltage - 1.6 2.1 Vas = 15V, Ic = 100A
- 1.6 - V Vss =15V, Ic =100A,TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 k; = 500PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, IC = 500pA
gfe Forward Transconductance " - 107 - S VCE = 25V, IC = 100A
ICES Collector-to-Emitter Leaking Current - - 1.0 mA VGE = 0V, VCE = 600V
- - 10 Vas = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage - Maximum - 3.6 - V IF = 100A, VGE = 0V
- 3.5 - IF =1OOA, VGE = 0V, To =125°C
IGES Gate-to-Emitter Leakage Current - - 100 nA l/ss = t20V
Dynamic Characteristics - T, = 125°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 443 664 Vcc = 400V
Qge Gate - Emitter Charge (turn-on) - 86 129 nC Ic = 66A
Qgc Gate - Collector Charge (turn-on) - 150 225 Tu = 25°C
tdwn) Turn-On Delay Time - 168 - RSI = 279, R62 = on
t, Rise Time - 145 - ns IC = 100A
tum) Turn-Off Delay Time - 320 - Vcc = 360V
tf Fall Time - 242 - Vas = 115V
Eon Turn-On Switching Energy - 4.0 - mJ
Es, (1) Turn-Off Switching Energy - 7.0 -
Ets (1) Total Switching Energy - 11 17
Cies Input Capacitance - 9837 - VGE = 0V
Coes Output Capacitance - 615 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 128 - f = 1 MHz
trr Diode Reverse Recovery Time - 143 - ns Ic = 100A
|rr Diode Peak ReverseCurrent - 95 - A RG1 = 279
Qrr Diode Recovery Charge - 6813 - nC RG2 = on
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 1883 - A/ps Vcc = 360V
During tr, di/dt"1300A/ps
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