IC Phoenix
 
Home ›  GG1 > G20N60B3D,40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
G20N60B3D Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
G20N60B3DFAIRCHILDN/a48avai40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
G20N60B3DHARRISN/a49avai40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode


G20N60B3D ,40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at moderate frequencies where low Econduction losses are essential.CGFormerl ..
G20N60B3D ,40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs  Short Circuit Ratedand bipolar transistors. The device has the high input imp ..
G218B ,mode Technology Inc - Ultra160 Multi-mode LVD/SE SCSI Terminator
G218BR-D3 ,mode Technology Inc - Ultra160 Multi-mode LVD/SE SCSI Terminator
G2301 , P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2305 , P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GM7130-ATA5R , 3A STEP DOWN VOLTAGE SWITCHING REGULATORS
GM7130-ATB5T , 3A STEP-DOWN VOLTAGE SWITCHING REGULATORS
GM71C4256A-70 , 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
GM71C4256B-80 , New Generation Dynamic RAM
GM71C4256BJ-60 , New Generation Dynamic RAM
GM71C4256BJ-70 , New Generation Dynamic RAM


G20N60B3D
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60B3D
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25o C and 150o C. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Symbol
Features
40A, 600V at TC = 25oC Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC Short Circuit Rated Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering Information

NOTE: When ordering, use the entire part number.
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED