FZT3019 ,NPN Medium Power TransistorFZT3019FZT3019NPN General Purpose Amplifier4• This device is designed for general purpose medium po ..
FZT3019 ,NPN Medium Power Transistorapplications involving pulsed or low duty cycle operations.
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FZT3019
NPN Medium Power Transistor
FZT3019 FZT3019 NPN General Purpose Amplifier 4 • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. 3 • Sourced from process 12. 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Voltage 140 V CBO V Emitter-Base Voltage 7.0 V EBO I Collector Current - Continuous 7.0 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 30 mA, I = 0 80 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 μA, I = 0 7.0 V (BR)EBO E C I Collector Cutoff Current V = 90 V, I = 0 0.01 μA CBO CB E V = 90 V, I = 0, T = 150°C 10 μA CB E a I Emitter-Cutoff Current 0.01 μA EBO On Characteristics h DC Current Gain I = 0.1 mA, V = 10 V 50 FE C CE = 10 mA, V = 10 V I 90 C CE I = 150 mA, V = 10 V 100 300 C CE I = 500 mA, V = 10 V 50 C CE I = 1.0 A, V = 10 V 15 C CE V Collector-Emitter Saturation Voltage I = 500 mA, I = 15 V 0.2 V CE(sat) C B I = 1.0 A, I = 50 V 0.5 V C B V Base-Emitter Saturation Voltage I = 10 mA, I = 15 V 1.1 V BE(sat) C B Small Signal Characteristics Current Gain - Bandwidth Product I = 50 mA, V = 10 V, f = 20 MHz 100 MHz f T C CE C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 12 pF cob CB E C Input Capacitance V = 10 V, I = 0, f = 1.0 MHz 60 pF ibo BE E h Small Signal current Gain I = 50 mA, V = 10 V, 80 400 fe C CE f = 20 MHz rb’Cc Collector Base Time Constant I = 10 mA, V = 10 V, f = 4.0 MHz 400 pS C CB NF Noise Figure I = 100 mA, V = 10 V, 4.0 dB C CE R = 1.0kΩ, f = 1.0KHz S * Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% ©2004 Rev. A, April 2004
