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FYPF1004DNTU
Schottky Barrier Rectifier
FYPF1004DN FYPF1004DN Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection Applications TO-220F Switched mode power supply 1 2 3 Freewheeling diodes 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 40 V RRM V Maximum DC Reverse Voltage 40 V R I Maximum Average Rectified Current @ T = 130°C10 A F(AV) C I Maximum Forward Surge Current (per diode) 80 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature -40 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case (per diode) 4.5 °C/W θJC Electrical Characteristics (per diode) T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Maximum Instantaneous Forward Voltage V FM * I = 5A T = 25 °C 0.55 F C I = 5A T = 125 °C 0.49 F C I = 10A T = 25 °C 0.67 F C I = 10A T = 125 °C 0.65 F C I Maximum Instantaneous Reverse Current mA RM * @ rated V T = 25 °C 1 R C T = 125 °C 40 C * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. A, July 2000
