FSB50550U ,Motion SPM?5 Seriesapplicationsand 3 half-bridge HVICs for FRFET gate driving. FSB50550U provides low electromagnetic ..
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FSB50550US ,Motion SPM?5 SeriesGeneral Description• 500 V R = 1.4 Ω(Max) FRFET MOSFET 3-Phase FSB50550US is an Advanced Motion SPM ..
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FSB50550U
Motion SPM?5 Series
FSB50550U Smart Power Module (SPM®) February 2009 FSB50550U ® Smart Power Module (SPM ) Features General Description ® FSB50550U is a tiny smart power module (SPM ) based on •500V R =1.4Ω(max) 3-phase FRFET inverter including DS(on) FRFET technology as a compact inverter solution for small high voltage integrated circuit (HVIC) power motor drive applications such as fan motors and water • 3 divided negative dc-link terminals for inverter current sens- suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), ing applications and 3 half-bridge HVICs for FRFET gate driving. FSB50550U provides low electromagnetic interference (EMI) characteristics • HVIC for gate driving and undervoltage protection with optimized switching speed. Moreover, since it employs • 3/5V CMOS/TTL compatible, active-high interface FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based • Optimized for low electromagnetic interference power module or one-chip solution. The package is optimized • Isolation voltage rating of 1500Vrms for 1min. for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50550U is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units DC Link Input Voltage, V 500 V PN Drain-source Voltage of each FRFET I Each FRFET Drain Current, Continuous T = 25°C 2.0 A D25 C I Each FRFET Drain Current, Continuous T = 80°C 1.5 A D80 C I Each FRFET Drain Current, Peak T = 25°C, PW < 100μs 5 A DP C P Maximum Power Dissipation T = 25°C, Each FRFET 14.5 W D C V Control Supply Voltage Applied between V and COM 20 V CC CC V High-side Bias Voltage Applied between V -U, V -V, V -W 20 V BS B(U) B(V) B(W) V Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V IN T Operating Junction Temperature -40 ~ 150 °C J T Storage Temperature -50 ~ 150 °C STG Each FRFET under inverter operating con- Junction to Case Thermal Resistance °C/W R 8.6 θJC dition (Note 1) 60Hz, Sinusoidal, 1 minute, Connection V Isolation Voltage 1500 V ISO rms pins to heatsink ©2009 1 FSB50550U Rev. A
