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FQU10N20L from FSC, Fairchild Semiconductor 1000pcs , TO251,200V LOGIC N-Channel MOSFET
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FQU10N20L FSC N/a 1000

FeaturesThese N-Channel enhancement mode power field effect  7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) GStransistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are Low level gate drive requirement allowing directwell suited for high efficiency switching DC/DC converters,operation from logic driversswitch mode power supplies, and motor control.DD ! !""!!""""G! !"" D-PAK I-PAKG SGFQD Series FQU SeriesD S ! !SAbsolute Maximum Ratings T = 25°C unless otherwise notedCSymbol Parameter FQD10N20L / FQU10N20L UnitsV Drain-Source Voltage 200 VDSSI - Continuous (T = 25°C)Drain Current 7.6 AD C- Continuous (T = 100°C)4.8 ACI (Note 1)Drain Current - Pulsed 30.4 ADMVGate-Source Voltage ± 20 VGSSE (Note 2)Single Pulsed Avalanche Energy 180 mJASIAvalanche Current (Note 1) 7.6 AARE (Note 1)Repetitive Avalanche Energy 5.1 mJARdv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/nsPower Dissipation (T = 25°C) *2.5 WP ADPower Dissipation (T = 25°C)51 WC- Derate above 25°C 0.4 W/°CT , TOperating and Storage Temperature Range -55 to +150 °CJ STGMaximum lead temperature for soldering purposes,T300 °CL1/8” from case for 5 secondsThermal Characteristics Symbol Parameter Typ Max UnitsR Thermal Resistance, Junction-to-Case -- 2.48 °C/WθJCRThermal Resistance, Junction-to-Ambient * -- 50 °C/WθJAR Thermal Resistance, Junction-to-Ambient -- 110 °C/WθJA* When mounted on the minimum pad size recommended (PCB Mount)2000 Fairchild Semiconductor International Rev. A2, December 2000FQD10N20L / FQU10N20L

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