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FQT7N10FAIRCHILN/a32000avai100V N-Channel MOSFET


FQT7N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FQT7N10
100V N-Channel MOSFET
FQT7N10 May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 100V, R = 0.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! D "" !!"" "" G! ! S "" G SOT-223 ! ! S FQT Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQT7N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 1.7 A D C - Continuous (T = 70°C) 1.36 A C I (Note 1) Drain Current - Pulsed 6.8 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 1.7 A AR E (Note 1) Repetitive Avalanche Energy 0.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 2.0 W D C - Derate above 25°C 0.016 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, May 2001
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