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FQT5P10TFFAIRCHILDN/a629avai100V P-Channel QFET


FQT5P10TF ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FQT5P10TF
100V P-Channel QFET
FQT5P10 TM QFET FQT5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.0A, -100V, R = 1.05Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D S G G SOT-223 FQT Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQT5P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -1.0 A D C - Continuous (T = 70°C) -0.8 A C I (Note 1) Drain Current - Pulsed -4.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 55 mJ AS I Avalanche Current (Note 1) -1.0 A AR E (Note 1) Repetitive Avalanche Energy 0.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25°C) 2.0 W D C - Derate above 25°C 0.016 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. B, August 2002
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