FQT13N06TF ,60V N-Channel QFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQT1N60C ,N-Channel QFET?MOSFET 600V, 0.2A, 11.5?FeaturesThis N-Channel enhancement mode power MOSFET is •0.2 A, 600 V, R =9.3 Ω(.)7\S @V =10 V, I = ..
FQT1N80TF-WS , N-Channel MOSFET
FQT2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -0.55A, -250V, R = 4.0Ω @V = 10 VDS(o ..
FQT3P20 ,200V P-Channel MOSFETFeaturestransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.• -0. ..
FQT3P20TF ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
G965-25ADJP1UF ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
FQT13N06TF
60V N-Channel QFET
FQT13N06 January 2002 TM QFET FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 60V, R = 0.14Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D ! ! D "" !!"" "" S G! ! "" G SOT-223 ! ! FQT Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQT13N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 2.8 A D C - Continuous (T = 70°C) 2.24 A C I (Note 1) Drain Current - Pulsed 11.2 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 85 mJ AS I Avalanche Current (Note 1) 2.8 A AR E (Note 1) Repetitive Avalanche Energy 0.21 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25°C) 2.1 W D C - Derate above 25°C 0.017 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 60 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. A2, January 2002
