FQPF9N30 ,300V N-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQPF9N30300V N-Channel MOSFET
FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FQPF9N50 ,500V N-Channel MOSFET
FQPF9N50 ,500V N-Channel MOSFET
FQPF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 0.62Ω @V = -10 VDS( ..
G960T45U , 3.3V 1A Low Dropout Regulator
G961-18ADJTEU ,mode Technology Inc - 1A Low Dropout Regulator with Enable
G961-18ADJTEU ,mode Technology Inc - 1A Low Dropout Regulator with Enable
G965-25ADJP1UF ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
FQPF9N30
300V N-Channel MOSFET
May 2000 TM QFET QFET QFET QFET FQPF9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 17 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF9N30 Units V Drain-Source Voltage 300 V DSS I - Continuous (T = 25°C) Drain Current 6.0 A D C - Continuous (T = 100°C) 3.8 A C I (Note 1) Drain Current - Pulsed 24 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 420 mJ AS I Avalanche Current (Note 1) 6.0 A AR E (Note 1) Repetitive Avalanche Energy 4.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 42 W D C - Derate above 25°C 0.34 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.98 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF9N30
