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FQP8N80CFSCN/a15avai800V N-Channel Advance Q-FET C-Series
FQP8N80CFAIRCHILDN/a500avai800V N-Channel Advance Q-FET C-Series
FQPF8N80CFAIRCHILDN/a12000avai800V N-Channel Advance Q-FET C-Series


FQPF8N80C ,800V N-Channel Advance Q-FET C-SeriesFQP8N80C/FQPF8N80CTMQFETFQP8N80C/FQPF8N80C800V N-Channel MOSFET
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FQP8N80C-FQPF8N80C
800V N-Channel Advance Q-FET C-Series
FQP8N80C/FQPF8N80C TM QFET FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  8A, 800V, R = 1.55Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 35 nC) planar stripe, DMOS technology.  Low Crss ( typical 13 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP8N80C FQPF8N80C Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 88 * A D C - Continuous (T = 100°C) 5.1 5.1 * A C I (Note 1) Drain Current - Pulsed 32 32 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 850 mJ AS I Avalanche Current (Note 1) 8A AR E (Note 1) Repetitive Avalanche Energy 17.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 178 59 W D C - Derate above 25°C 1.43 0.48 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP8N80C FQPF8N80C Units R Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, March 2003
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