FQPF6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.2A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQPF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF7N10L ,100V LOGIC N-Channel MOSFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
FQPF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQPF7N80 ,800V N-Channel MOSFET
FQPF7N80 ,800V N-Channel MOSFET
G950T45U , 2.5V 1A Regulator
G952T24UF ,mode Technology Inc - 1.8V 1A Regulator
G952T43U ,mode Technology Inc - 1.8V 1A Regulator
G952T63U ,mode Technology Inc - 1.8V 1A Regulator
G952T65U ,mode Technology Inc - 1.8V 1A Regulator
G952T65UF ,mode Technology Inc - 1.8V 1A Regulator
FQPF6P25
250V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQPF6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.2A, -250V, R = 1.1Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!!!!!! �������� G ���� !!!!!!!! ���� �������� �������� �������� GS D TO-220F !!!!!!!! D FQPF Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQPF6P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -4.2 A D C - Continuous (T = 100°C) -1.78 A C I (Note 1) Drain Current - Pulsed -16.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 540 mJ AS I Avalanche Current (Note 1) -4.2 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 45 W D C - Derate above 25°C 0.36 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.78 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF6P25
