FQPF5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
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FQPF5P20
200V P-Channel MOSFET
May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • -3.4A, -200V, R = 1.4Ω @V = -10 V DS(on) GS This advanced technology has been especially tailored to • Low gate charge ( typical 10 nC) minimize on-state resistance, provide superior switching • Low Crss ( typical 12 pF) performance, and withstand high energy pulse in the • Fast switching avalanche and commutation mode. These devices are well • 100% avalanche tested suited for high efficiency switching DC/DC converters. S !!!!!!!! ●●●●●●●● ●●●● G!!!!!!!! ●●●● ▶▶▶▶▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●●●●●● G D !!!! S TO-220F !!!! D FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF5P20 Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -3.4 A D C - Continuous (T = 100°C) -2.15 A C I (Note 1) Drain Current - Pulsed -13.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) -3.4 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 38 W D C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.29 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQPF5P20
