FQPF5N50CF ,500V N-Channel QFET?C-SeriesFQPF5N50CF 500V N-Channel MOSFETTMFRFETFQPF5N50CF 500V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF5N80800V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQPF5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.0A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQPF5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
G931T24U ,mode Technology Inc - 3.5V 400mA Low Dropout Regulator
G931T24UF ,mode Technology Inc - 3.5V 400mA Low Dropout Regulator
G9353M , IF Filter for Audio Applications 38,90 MHz
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G9353M , IF Filter for Audio Applications 38,90 MHz
G950T45U , 2.5V 1A Regulator
FQPF5N50CF
500V N-Channel QFET?C-Series
FQPF5N50CF 500V N-Channel MOSFET TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, R = 1.55 Ω @V = 10 V These N-Channel enhancement mode power field effect transis- DS(on) GS tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220F G D S FQPF Series !!!! !!!! S Absolute Maximum Ratings Symbol Parameter FQPF5N50CF Units V Drain-Source Voltage V DSS 500 I Drain Current - Continuous (T = 25°C) 5 A D C - Continuous (T = 100°C) 2.9 A C (Note 1) I Drain Current - Pulsed 20 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 300 mJ AS (Note 1) I Avalanche Current 5A AR (Note 1) E Repetitive Avalanche Energy 7.3 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 38 W D C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG T Maximum lead temperature for soldering purposes, 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter FQPF5N50CF Units R Thermal Resistance, Junction-to-Case 3.31 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. -- °C/W θJS Thermal Resistance, Junction-to-Ambient 62.5 °C/W R θJA ©2005 1 FQPF5N50CF Rev. B
