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FQPF4N20LFSCN/a750avai200V LOGIC N-Channel MOSFET
FQPF4N20LFAIRCHILN/a2000avai200V LOGIC N-Channel MOSFET


FQPF4N20L ,200V LOGIC N-Channel MOSFETFQPF4N20LDecember 2000TMQFET QFET QFET QFETFQPF4N20L200V LOGIC N-Channel MOSFET
FQPF4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  3.0A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQPF4N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  2.6A, 600V, R = 2.2Ω @V = 10 VDS(on) ..
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FQPF4N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  2.2A, 800V, R = 3.6Ω @V = 10 VDS(on) ..
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FQPF4N20L
200V LOGIC N-Channel MOSFET
FQPF4N20L December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  3.0A, 200V, R = 1.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology.  Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize  Fast switching on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode.s These devices are  Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF4N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 3.0 A D C - Continuous (T = 100°C) 1.9 A C I (Note 1) Drain Current - Pulsed 12 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 52 mJ AS I Avalanche Current (Note 1) 3.0 A AR E (Note 1) Repetitive Avalanche Energy 2.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 27 W D C - Derate above 25°C 0.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.63 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A2, December 2000
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