FQPF2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.6A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQPF2N60C ,600V N-Channel Advance Q-FET C-SeriesFQP2N60C/FQPF2N60CTMQFETFQP2N60C/FQPF2N60C600V N-Channel MOSFET
FQPF2N70 ,700V N-Channel Q-FETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, R = 6.3Ω @V = 10 VDS(on) ..
FQPF2N70 ,700V N-Channel Q-FETFQPF2N70TMQFETFQPF2N70700V N-Channel MOSFET
FQPF2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.5A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQPF2N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF2N80800V N-Channel MOSFET
G914C ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQPF2N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQPF2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 600V, R = 4.7Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! FQPF Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQPF2N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 1.6 A D C - Continuous (T = 100°C) 1.0 A C I (Note 1) Drain Current - Pulsed 6.4 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 140 mJ AS I Avalanche Current (Note 1) 1.6 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 28 W D C - Derate above 25°C 0.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.46 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF2N60
